Title :
Fast response InP/InGaAsP heterojunction phototransistors
Author :
Fritzsche, Daniel ; Kuphal, E. ; Aulbach, R.
Author_Institution :
Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
Abstract :
InP/InGaAsP heterojunction phototransistors with a base terminal have been fabricated, showing hFE, values of up to 2000. These devices allow us to trade gain for speed by charge extraction from the base. At a voltage gain of 8 to 9 a response time of 2 ns is observed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; p-n heterojunctions; phototransistors; III-V semiconductors; InP/InGaAsP heterojunction phototransistors; charge extraction; voltage gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810126
