Title :
GaAs microwave power FET with polyimide overlay interconnection
Author :
Turner, Brough ; Barr, W.P. ; Cooper, D.P. ; Taylor, Daniel J.
Author_Institution :
RSRE MOD(PE), Malvern, UK
Abstract :
An overlay interconnection technology has been developed for GaAs microwave power FETs, using polyimide as an insulator. An output power of 1017 mW at 4.3 dB gain was achieved at 8 GHz with 27° power added efficiency from a device with a gate width of 1.2 mm. Comparison with devices without overlay interconnection and having a narrower gate width revealed no evidence for degradation in device performance attributable to the interconnection technology.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; 8 GHz; GaAs microwave power FETs; III-V semiconductors; polyimide overlay interconnection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810131
