Title :
10 Gbit/s AND gate using dual-gate GaAs MESFET
Author :
Tell, Roei ; Andersson, Tyrone ; Eng, S.T.
Author_Institution :
Chalmers University of Technology, Research Laboratory of Electro-Optics & Lasers, Gothenburg, Sweden
Abstract :
Using a commercial dual-gate GaAs MESFET transistor mounted in a microstrip circuit, an AND gate has been built. With the 100 ps (FWHM) wide test pulses available, a speed of 10 Gbit/s NRZ and a pulse suppression of at least 14 dB was obtained.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect transistor circuits; gallium arsenide; logic gates; multiplexing equipment; optical communication equipment; 10 Gbit/s AND gate; GaAs MESFET; III-V semiconductor; NRZ; microstrip circuit; pulse suppression;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810142
