Analytical model for I-V characteristics of ion-implanted MESFET´s with heavily doped channel

Author

Mohammad, S.Noor ; Patil, M.B. ; Chyi, J. -I ; Gao, G.B. ; Morkoç, Hadis

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA

Volume

37

Issue

1

fYear

1990

fDate

1/1/1990 12:00:00 AM

Firstpage

11

Lastpage

20

Abstract

A theoretical model for the I-V characteristics of ion-implanted metal-semiconductor field-effect transistors (MESFETs) has been developed. A formula for effective drift saturation velocity for electrons and a Gaussian approximation for the inverse of reduced distances in the channel have erased the process of formulation. Theoretical formulas for early saturation of drain current and transconductance obtained in the framework of the Lehovec-Zuleeg procedure are quite simple and accurate. When calculated results from the present model are compared with available experimental results, an encouraging correspondence between the two is observed. A study of the appropriateness of the velocity overshoot and the softening of pinch-off voltage indicates that both of these phenomena are real in short-channel MESFETs and need to be carefully accounted for in a realistic model. The model is equally applicable also to ion-implanted JFETs

Keywords

Schottky gate field effect transistors; carrier mobility; heavily doped semiconductors; ion implantation; semiconductor device models; Gaussian approximation; I-V characteristics; Lehovec-Zuleeg procedure; drain current; early saturation; electron effective drift saturation velocity; formulation process; heavily doped channel; ion-implanted; ion-implanted JFETs; pinch-off voltage softening; reduced distances; short-channel MESFETs; theoretical model; transconductance; velocity overshoot; Analytical models; Doping; Electrons; FETs; Gallium arsenide; Gaussian approximation; MESFETs; Softening; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43795

Filename

43795