Properties and design theory of ultrafast GaAs metal-semiconductor-metal photodetector with symmetrical Schottky contacts

Author

Nakajima, Kazutoshi ; Iida, Takashi ; Sugimoto, Ken-Ichi ; Kan, Hirofumi ; Mizushima, Yoshihiko

Author_Institution

Hamamatsu Photonics, Japan

Volume

37

Issue

1

fYear

1990

fDate

1/1/1990 12:00:00 AM

Firstpage

31

Lastpage

35

Abstract

A GaAs metal-semiconductor-metal photodetector fabricated in a symmetrical and interdigital Schottky contact structure on a semi-insulating GaAs substrate is discussed. The device exhibits a high-speed response and a very low dark current, even with a moderate size (200 μm²). Ultrafast responsivity is due to the high drift velocity of the photoelectrons and low capacitance. A design theory for optimum performance which includes a compromise between the circuit time constant and the transit time is described

Keywords

III-V semiconductors; Schottky effect; gallium arsenide; infrared detectors; metal-semiconductor-metal structures; photoconducting devices; photodetectors; GaAs; circuit time constant; design theory; high-speed response; interdigital Schottky contact structure; low capacitance; low dark current; metal-semiconductor-metal photodetector; optimum performance; photoelectron high drift velocity; semi-insulating GaAs substrate; symmetrical Schottky contacts; transit time; ultrafast responsivity; Current-voltage characteristics; Dark current; Electrodes; Electrons; Gallium arsenide; Optical noise; Photodetectors; Schottky barriers; Semiconductor films; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43797

Filename

43797