DocumentCode
969812
Title
Drain-engineered hot-electron-resistant device structures: a review
Author
Sanchez, Julian J. ; Hsueh, Kelvin K. ; DeMassa, Thomas A.
Author_Institution
Intel Corp., Chandler, AZ, USA
Volume
36
Issue
6
fYear
1989
fDate
6/1/1989 12:00:00 AM
Firstpage
1125
Lastpage
1132
Abstract
Various MOS structures with specially designed drain regions are reviewed. Guidelines are established for the fabrication of hot-electron-resistant device structures. Additionally, suggestions are made with reference to device structures suitable for a manufacturing environment
Keywords
insulated gate field effect transistors; reviews; semiconductor device models; MOS structures; design for manufacture; design guidelines; drain engineered MOSFET; fabrication; hot-electron-resistant device structures; review; specially designed drain regions; Breakdown voltage; Doping; Electric resistance; Fabrication; Guidelines; Implants; Kelvin; Manufacturing; Secondary generated hot electron injection; Space technology;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.24357
Filename
24357
Link To Document