Title :
Drain-engineered hot-electron-resistant device structures: a review
Author :
Sanchez, Julian J. ; Hsueh, Kelvin K. ; DeMassa, Thomas A.
Author_Institution :
Intel Corp., Chandler, AZ, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
Various MOS structures with specially designed drain regions are reviewed. Guidelines are established for the fabrication of hot-electron-resistant device structures. Additionally, suggestions are made with reference to device structures suitable for a manufacturing environment
Keywords :
insulated gate field effect transistors; reviews; semiconductor device models; MOS structures; design for manufacture; design guidelines; drain engineered MOSFET; fabrication; hot-electron-resistant device structures; review; specially designed drain regions; Breakdown voltage; Doping; Electric resistance; Fabrication; Guidelines; Implants; Kelvin; Manufacturing; Secondary generated hot electron injection; Space technology;
Journal_Title :
Electron Devices, IEEE Transactions on
