Title :
Low breakdown voltage Schottky diode as voltage regulator
Author :
Popovi¿¿, R.S. ; Mladenovi¿¿, D.A.
Author_Institution :
Ei Fabrika Poluprovodnika, Ni¿, Yugoslavia
Abstract :
Experimental evidence is given showing that Ag-n-Si Schottky diodes with resistivity about 40 m¿cm have steeper reverse breakdown characteristics than corresponding low-voltage p-n junction regulator diodes fabricated by local epitaxy. Avalanche multiplication in such a diode starts at 1.7 V, and the device has a low positive temperature coefficient of breakdown voltage.
Keywords :
Schottky-barrier diodes; semiconductor-metal boundaries; silicon; silver; voltage regulators; Ag-n-Si Schottky diodes; avalanche multiplication; elemental semiconductor; reverse breakdown characteristics; voltage regulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810152
