• DocumentCode
    969848
  • Title

    Low breakdown voltage Schottky diode as voltage regulator

  • Author

    Popovi¿¿, R.S. ; Mladenovi¿¿, D.A.

  • Author_Institution
    Ei Fabrika Poluprovodnika, Ni¿, Yugoslavia
  • Volume
    17
  • Issue
    6
  • fYear
    1981
  • Firstpage
    214
  • Lastpage
    215
  • Abstract
    Experimental evidence is given showing that Ag-n-Si Schottky diodes with resistivity about 40 m¿cm have steeper reverse breakdown characteristics than corresponding low-voltage p-n junction regulator diodes fabricated by local epitaxy. Avalanche multiplication in such a diode starts at 1.7 V, and the device has a low positive temperature coefficient of breakdown voltage.
  • Keywords
    Schottky-barrier diodes; semiconductor-metal boundaries; silicon; silver; voltage regulators; Ag-n-Si Schottky diodes; avalanche multiplication; elemental semiconductor; reverse breakdown characteristics; voltage regulator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810152
  • Filename
    4245617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969848