Title :
A method of determining the lifetime and diffusion coefficient of minority carriers in a semiconductor wafer
Author :
Suzuki, Eiichi ; Hayashi, Yutaka
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
fDate :
6/1/1989 12:00:00 AM
Abstract :
A method of determining the lifetime π and diffusion coefficient D of excess minority carriers is proposed. It is shown that an approximate lifetime and diffusion coefficient are obtained graphically if the back-surface recombination velocity of the sample is large. More precise values of π and D are obtained by curve fitting with the aid of calculated correction factors. It is also shown that the proposed method can be applied to a nondestructive measurement of a minority-carrier lifetime using liquid-metal contacts (mercury probes)
Keywords :
carrier lifetime; diffusion in solids; electrical conductivity measurement; elemental semiconductors; minority carriers; silicon; Hg probes; Hg-Si; back-surface recombination velocity; correction factors; curve fitting; diffusion coefficient measurement; diffusion coefficient of minority carriers; excess minority carriers; liquid-metal contacts; measurement; mercury probes; minority carrier lifetime; nondestructive measurement; semiconductor wafer; Curve fitting; Degradation; Equations; Fabrication; Lifetime estimation; Performance evaluation; Probes; Radiative recombination; Schottky barriers; Velocity measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
