Freeze-out effects on NMOS transistor characteristics at 4.2 K

Author

Simoen, E. ; Dierickx, B. ; Warmerdam, L. ; Vermeiren, J. ; Claeys, C.

Author_Institution

IMEC, Leuven, Belgium

Volume

36

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1155

Lastpage

1161

Abstract

Detailed substrate current characteristics of nMOSTs at 4.2 K were obtained with a view to elucidating their transient (hysteresis) and kink behavior below carrier freeze-out. A great similarity with room-temperature behavior is found, indicating that analogous expressions for the substrate current I_B can be used to calculate the transient time constant that follows from the forced depletion layer formation (FDLF) model reported previously by the authors (see ibid., vol.ED-35, p.1120-5, 1988). In a second part to this work, it will be demonstrated that both the substrate and the cooling bias have a marked influence on the kink. These effects can be fully understood with the FDLF model

Keywords

insulated gate field effect transistors; semiconductor device models; 4.2 K; FDLF model; MOSFETs; NMOS transistor characteristics; carrier freeze-out; cooling bias; forced depletion layer formation; freeze out effects; hysteresis behavior; kink behavior; nMOSTs; room-temperature behavior; substrate bias; substrate current; substrate current characteristics; transient behavior; transient time constant; Atomic layer deposition; Cooling; Hysteresis; Impact ionization; MOSFETs; Semiconductor devices; Substrates; Temperature; Threshold voltage; Transient response;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.24362

Filename

24362