Title :
DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics
Author :
Ando, Yuji ; Itoh, Tomohiro
Author_Institution :
NEC Corp., Kawasaki, Japan
fDate :
1/1/1990 12:00:00 AM
Abstract :
A practical model for DC, small-signal, and noise characteristics in two-dimensional electron gas field-effect transistors is discussed. The model includes accurate charge-control characteristics based on analytical functions relating carrier concentration to Fermi level. This model allows the influence of drain current, frequency, and device parameters on the noise figure (NF) to be studied. The theory explains the experimentally observed trend in NF behaviors
Keywords :
carrier density; electron device noise; high electron mobility transistors; semiconductor device models; DC; Fermi level; analytical functions; carrier concentration; charge-control characteristics; device parameters; drain current; frequency; noise figure; noise modeling; small-signal; two-dimensional electron gas field-effect transistors; Capacitance; Circuit noise; Electrons; Epitaxial layers; FETs; Frequency; Noise figure; Noise level; Noise measurement; Noise shaping;
Journal_Title :
Electron Devices, IEEE Transactions on
