Multiple-wavelength integration in InGaAs-InGaAsP structures using pulsed laser irradiation-induced quantum-well intermixing

In this paper, we present the characteristics of a quantum-well intermixing technique using pulsed-photoabsorption-induced disordering. Photoluminescence, micro-Raman spectroscopy, and transmission electron microscopy were used to characterize the process. Using this technique, a differential wavelength shift between the intermixed and nonintermixed regions of over 160 nm has been observed from InGaAs-InGaAsP heterostructures. It was found from the micro-Raman measurements that a spatial resolution of better than 2.5 μm can be achieved. A theoretical model has been developed to estimate the spatial resolution limit. Theoretical analysis has also been performed to investigate the effect of laser irradiation on the degree of intermixing in InGaAs-InGaAsP structures. To verify the capability of this process in monolithic photonic integration, high-quality bandgap tuned lasers, two-section extended cavity lasers, and multiple-wavelength laser chips have been fabricated.