Title :
High temperature CW operation of 1.5 ¿m InGaAsP/InP buffer-layer loaded planoconvex waveguide lasers
Author :
Noda, Yasuo ; Sakai, Kenji ; Matsushima, Y.
Author_Institution :
KDD Research & Development Laboratories, Tokyo, Japan
Abstract :
InGaAsP/InP buffer-layer loaded planoconvex waveguide lasers are reported. The CW threshold current at 20°C was 70 mA. The maximum CW operating temperature of 70°C was achieved. The characteristic temperature under CW operation was 51 K. Operation in fundamental transverse mode and single longitudinal mode up to 1.9 and 1.4 times the threshold current, respectively, was obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.5 micron; CW threshold current; III-V semiconductors; InGaAsP/InP; planoconvex waveguide lasers; single longitudinal mode; transverse mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810160
