Title :
Etched profiles of SiO2 Layer
Author :
Oh, Se-Ho ; Choi, Yearn-Ik ; Kwon, Young-Se ; Kim, Choong-Ki
Author_Institution :
Korea Advanced Insititute of Science & Technology, Department of Electrical Science, Seoul, Korea
Abstract :
Etched-edge profile equations of SiO2 in a double layer of fast- and slow-etching SiO2 layer have been derived using Fermat´s principle of least time. Etched profiles obtained from the SEM (scanning electron microscope) micrographs for experimental samples show reasonable agreement with calculated profiles.
Keywords :
etching; silicon compounds; Fermat´s principle; SEM) (scanning electron microscope; SiO2 layer; etch edge profile equations; least time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810161
