Silicon-Layer Guided-Mode Resonance Polarizer With 40-nm Bandwidth

Author

Lee, K.J. ; LaComb, R. ; Britton, B. ; Shokooh-Saremi, M. ; Silva, H. ; Donkor, E. ; Ding, Y. ; Magnusson, R.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT

Volume

20

Issue

22

fYear

2008

Firstpage

1857

Lastpage

1859

Abstract

Fabrication and characterization of a guided-mode resonance-based polarizer is presented. This polarizer is made by electron-beam patterning a single layer of amorphous silicon on a glass substrate. The fabricated device has high and low transmittance for transverse-electric and transverse-magnetic polarizations, respectively, over a ~ 40-nm wavelength range for normally incident light. Its experimental extinction ratio is ~ 97:1 at a central wavelength of 1510 nm.

Keywords

elemental semiconductors; light polarisation; optical design techniques; optical fabrication; optical polarisers; optical testing; silicon; Si; amorphous silicon; electron-beam patterning; glass substrate; guided-mode resonance polarizer; incident light; transverse-electric polarizations; transverse-magnetic polarizations; wavelength 1510 nm; wavelength 40 nm; Bandwidth; Extinction ratio; Gratings; Optical films; Optical filters; Optical polarization; Optical sensors; Optical waveguides; Resonance; Transistors; Guided-mode resonance (GMR); leaky waves; polarizer; thin-film optics;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2004777

Filename

4663217