Title :
Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror
Author :
Zhang, Sanjun ; Wu, E. ; Pan, Haifeng ; Zeng, Heping
Author_Institution :
Dept. of Phys., East China Normal Univ., Shanghai, China
fDate :
5/1/2004 12:00:00 AM
Abstract :
We demonstrate Q-switched and CW passive mode locking in a laser-diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror. The repetition rate of the Q-switched envelope increased from 23.1 to 260 kHz as the pump power increased from 1.75 to 13.0 W. At a pump power of 13.7 W, the Q-switched mode locking changed to CW mode locking. The maximum average output power of 4.9 W with a 140-MHz repetition rate was obtained at a pump power of 17.9 W and the single mode-locked pulse energy was 0.035 μJ. The CW mode-locked pulse duration was measured to be ∼11.5 ps.
Keywords :
Q-switching; gadolinium compounds; high-speed optical techniques; laser mirrors; laser mode locking; neodymium; optical pumping; optical saturable absorption; solid lasers; 0.035 muJ; 1.75 to 13.0 W; 11.5 ps; 13.7 W; 140-MHz repetition rate; 17.9 W; 23.1 to 260 kHz; 4.9 W; CW mode locking; CW mode-locked pulse duration; CW passive mode locking; GdVO4:Nd; Q-switched envelope; Q-switched mode locking; laser-diode-pumped Nd:GdVO4 laser; semiconductor saturable absorber mirror; single mode-locked pulse energy; Frequency conversion; Laser excitation; Laser mode locking; Laser theory; Mirrors; Optical pulses; Pulse measurements; Pump lasers; Semiconductor diodes; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.826418
