Title :
An analysis of the dynamic behavior of field-limiting ring-passivation system
Author :
Johnson, Martin K. ; Annis, Alexander D. ; Sandoe, Jeremy N. ; Coe, David
Author_Institution :
Philips Res. Lab., Redhill, UK
fDate :
6/1/1989 12:00:00 AM
Abstract :
The transient operation of field-limiting rings used for the passivation of power switching devices was studied. Results of experiment and fundamental modeling are presented. Since fundamental transient modeling is costly in computer time, an alternative simulation approach was used that involves a combination of off-state, on-state, and circuit modeling and reduces CPU times by two orders of magnitude. Computer simulations are used to illustrate the transient operation in detail and to indicate whether such behavior could ever lead to premature device breakdown
Keywords :
insulated gate field effect transistors; power transistors; semiconductor device models; semiconductor technology; CPU times; circuit modeling; computer time; dynamic behavior; experiment; field-limiting ring-passivation system; field-limiting rings; modeling; passivation; power switching devices; premature device breakdown; transient modeling; transient operation; Capacitance measurement; Circuit simulation; Circuit testing; Computational modeling; Computer simulation; Current measurement; Power system modeling; Silicon; Steady-state; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
