DocumentCode
969966
Title
Improved measurements of doping profiles in silicon using CV techniques
Author
McGillivray, Ian G. ; Robertson, John M. ; Walton, Anthony J.
Author_Institution
Dept. of Electr. Eng., Edinburgh Univ., UK
Volume
35
Issue
2
fYear
1988
fDate
2/1/1988 12:00:00 AM
Firstpage
174
Lastpage
179
Abstract
One of the problems of doping profile measurements using CV techniques is that numerical differentiation is required. This can, under certain circumstances, result in very noisy profiles. A method is presented for obtaining noise-free profiles by choosing a step size that takes account of the resolution of the capacitance meter to ensure that the maximum profile detail is retained. A range of other factors that can affect profiling accuracy is also reviewed
Keywords
capacitance measurement; doping profiles; elemental semiconductors; semiconductor technology; silicon; C-V techniques; Si; capacitance meter; doping profiles; noise-free profiles; semiconductor; step size; Capacitance measurement; Density measurement; Doping profiles; Gold; Implants; Measurement errors; Pulse measurements; Q measurement; Silicon; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2437
Filename
2437
Link To Document