Title :
GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates
Author :
Chang, Shoou-Jinn ; Jhou, Y.D. ; Lin, Y.C. ; Wu, S.L. ; Chen, C.H. ; Wen, T.C. ; Wu, L.W.
Author_Institution :
Inst. of Microelectron. & Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Abstract :
GaN-based metal-semiconductor-metal ultraviolet photodetectors (PDs) prepared on a patterned sapphire substrate (PSS) and a conventional flat sapphire substrate were both fabricated and characterized. It was found that we can reduce dark leakage current and enhance by about two orders of magnitude by using a PSS. The internal gain of the PDs prepared on a PSS was also much smaller.
Keywords :
III-V semiconductors; gallium compounds; leakage currents; photodetectors; wide band gap semiconductors; GaN; GaN-based photodetector; dark leakage current; metal-semiconductor-metal ultraviolet photodetectors patterned sapphire substrate; Conducting materials; Epitaxial layers; Etching; Gallium nitride; Leakage current; Light emitting diodes; MOCVD; Photodetectors; Substrates; Thermal conductivity; Internal gain; metal–semiconductor–metal (MSM); patterned sapphire substrate (PSS); photodetector (PD); threading dislocation (TD);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.2004814
