• DocumentCode
    969986
  • Title

    Effect of cavity length on 1.55 ¿m buried-heterostructure DH laser characteristics

  • Author

    Tokunaga, M. ; Nakano, Yoshiaki ; Takahei, K. ; Noguchi, Y. ; Nagai, Hiroto ; Nawata, Koji

  • Author_Institution
    NTT Yokosuka Electrical Communication Laboratory, Yokosuka, Japan
  • Volume
    17
  • Issue
    6
  • fYear
    1981
  • Firstpage
    234
  • Lastpage
    236
  • Abstract
    Various parameters in 1.55 ¿m buried-heterostructure DH laser design are obtained by simple analytical approximations and the effect of cavity length on laser characteristics. Threshold current density is found to vary strongly (3¿10 kA/cm2) with cavity length when cleaved short enough. Interference in far-field patterns is shown to depend on cavity length.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor junction lasers; III-V semiconductors; InGaAsP-InP DH lasers; analytical approximations; cavity length effect; far-field patterns; interference; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810166
  • Filename
    4245631
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969986