DocumentCode :
969989
Title :
Temperature dependence of electron saturation velocity in GaAs
Author :
Allam, R. ; Pribetich, J.
Author_Institution :
CNRS, Univ. des Sci. & Techniques de Lille, Villeneuve d´Ascq, France
Volume :
26
Issue :
11
fYear :
1990
fDate :
5/24/1990 12:00:00 AM
Firstpage :
688
Lastpage :
689
Abstract :
Electron saturation velocity is determined from the space charge resistance Rc and microwave impedance Zd of GaAs IMPATT diodes under linear conditions. Comparison between experimental measurement and theory is used in a large frequency bandwidth (2-18 GHz) at different temperatures (T\n\n\t\t
Keywords :
III-V semiconductors; IMPATT diodes; carrier mobility; gallium arsenide; 2 to 18 GHz; 300 to 500 K; GaAs; GaAs IMPATT diodes; electron saturation velocity; experimental measurement; frequency bandwidth; linear conditions; microwave impedance; semiconductors; space charge resistance; temperature dependence; theory;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900449
Filename :
106018
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=969989
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