Title :
High speed normally-off GaAs MESFET integrated circuit
Author :
Katano, F. ; Furutsuka, T. ; Higashisaka, A.
Author_Institution :
Nippon Electric Co. Ltd., Basic Technology Research Laboratories, Kawasaki, Japan
Abstract :
Normally-off GaAs MESFET integrated circuits with a maximum toggle frequency of 2.4 GHz were fabricated by conventional photolithography. The unfavourable effect of the surface depletion layer due to the large state density at the GaAs surface has been reduced by adopting the recessed gate FET structure.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; photolithography; GaAs MESFET integrated circuit; III-V semiconductor; photolithography; recessed gate FET structure; state density; surface depletion layer; toggle frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810167
