DocumentCode :
969999
Title :
Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3- 
m InAs–GaAs Quantum-Dot Lasers
Author :
Cao, Yulian ; Yang, Tao ; Ji, Haiming ; Ma, Wenquan ; Cao, Qing ; Chen, Lianghui
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing
Volume :
20
Issue :
22
fYear :
2008
Firstpage :
1860
Lastpage :
1862
Abstract :
We have fabricated 1.3-mum InAs-GaAs quantum-dot (QD) lasers with and without p-type modulation doping and their characteristics have been investigated. We find that introducing p-type doping in active regions can improve the temperature stability of 1.3-mum InAs-GaAs QD lasers, but it does not increase the saturation modal gain of the QD lasers. The saturation modal gain obtained from the two types of lasers is identical (17.5 cm-1 ). Moreover, the characteristic temperature increases as cavity length increases for the two types of lasers, and it improves more significantly for the lasers with p-type doping due to their higher gain.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; optical modulation; optical saturation; quantum dot lasers; semiconductor doping; thermal stability; InAs-GaAs; QD lasers; cavity length; p-type modulation doping; quantum-dot laser; saturation modal gain; temperature sensitivity dependence; temperature stability; wavelength 1.3 mum; Doping; Epitaxial layers; Gallium arsenide; Laser excitation; Laser stability; Laser theory; Semiconductor lasers; Temperature dependence; Temperature sensors; Threshold current; Characteristics temperature; p-doped; quantum- dot (QD) laser; saturation modal gain;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.2004778
Filename :
4663223
Link To Document :
