An automated system for measurement of random telegraph noise in metal-oxide-semiconductor field-effect transistors

Author

Hung, K.K. ; Ko, P.K. ; Hu, C. ; Cheng, Y.C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

36

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1217

Lastpage

1219

Abstract

A computer-controlled system for measuring the random telegraph noise in small-area MOSFETs is described. The key element is a specially designed current amplifier that employs a feedback technique to separate the fluctuating and DC parts of the drain current. Techniques for automatic extraction of the fluctuation amplitude and time constants from the raw data are also discussed

Keywords

amplifiers; computerised instrumentation; electron device noise; feedback; insulated gate field effect transistors; measurement systems; random noise; automated system for measurement; automatic extraction; computer-controlled system; current amplifier; drain current; feedback technique; fluctuation amplitude; metal-oxide-semiconductor field-effect transistors; random telegraph noise; small-area MOSFETs; time constants; 1f noise; Bipolar transistors; Circuit noise; FETs; MOSFETs; Monitoring; Noise measurement; Semiconductor device noise; Telegraphy; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.24373

Filename

24373