The resistance of laser-diffused diode links

Author

Cohen, S.S. ; Wyatt, P.W. ; Chapman, G.H. ; Canter, J.M.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

36

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1220

Lastpage

1223

Abstract

Laser-diffused diode link (LDL) process makes possible a direct connection between devices at the substrate level, thus giving more flexibility to the overall system design. The electrical properties of these diode links are studied. Calculations based on a model for the resistance agree well with available experimental data. This model also provides physical insight on previously undetermined material properties such as the dopant diffusivity in the melt as a function of temperature

Keywords

VLSI; application specific integrated circuits; electric resistance; integrated circuit technology; laser beam applications; semiconductor device models; semiconductor technology; Si wafers; WSI; antifuses; direct connection between devices; dopant diffusivity; electrical properties; experimental data; function of temperature; interconnection; laser-diffused diode links; material properties; melt; model; physical insight; resistance; substrate level; wafer scale integration; Diodes; Electric resistance; Integrated circuit interconnections; Joining processes; Laser beams; Laser modes; Laser theory; Programmable logic arrays; Semiconductor process modeling; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.24374

Filename

24374