• DocumentCode
    970061
  • Title

    Preparation of CuInS2 on GaP grown by LPE

  • Author

    Hwang, H.L. ; Lin, W.J. ; Chang, Hui Joe ; Sun, C.Y.

  • Author_Institution
    National Tsing Hua University, Departments of Electrical Engineering & Materials Science, Hsin-chu, Republic of China
  • Volume
    17
  • Issue
    6
  • fYear
    1981
  • Firstpage
    245
  • Lastpage
    246
  • Abstract
    The letter describes the use of LPE in the preparation of CuInS2 epitaxial layers. Both the tipping and sliding boat methods were adopted for the LPE growth, the latter being found more suitable.
  • Keywords
    III-V semiconductors; copper compounds; gallium compounds; indium compounds; liquid phase epitaxial growth; p-n heterojunctions; semiconductor epitaxial layers; semiconductor growth; sliding boat methods; tipping;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810174
  • Filename
    4245639
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970061