Title :
Determination of Si-SiO2 interface recombination parameters using a gate-controlled point-junction diode under illumination
Author :
Girisch, Reinhard B M ; Mertens, Robert P. ; De Keersmaecker, Roger F.
Author_Institution :
ESAT Lab., Katholieke Univ. Leuven, Heverlee, Belgium
fDate :
2/1/1988 12:00:00 AM
Abstract :
A novel method is presented to determine Si-SiO2 interface recombination parameters. The device used is a polysilicon-oxide-semiconductor capacitor with a microscale central junction (a gate-controlled point-junction diode). Data analysis has been performed using a numerical scheme to find a quasi-exact solution for the current combining at the interface. It was found that the interface recombination parameters depend only weakly on trap energy in a wide range around midgap. The cross-section for capturing electrons was found to exceed the cross-section for capturing holes by a factor of 102 to 103
Keywords :
electron-hole recombination; elemental semiconductors; interface electron states; semiconductor-insulator boundaries; silicon; silicon compounds; Si-SiO2 interface recombination; electron capture cross-section; gate-controlled point-junction diode; hole capture cross-section; illumination; interface traps; microscale central junction; numerical scheme; polysilicon-oxide-semiconductor capacitor; semiconductor insulator boundary; trap energy; Boron; Capacitors; Charge carrier processes; Current measurement; Data analysis; Diodes; Electron traps; Fluid flow measurement; Lighting; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
