Title :
Large-signal characterization of unipolar III-V semiconductor diodes at microwave and millimeter-wave frequencies
Author :
Tait, Gregory B. ; Krowne, Clifford M.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
2/1/1988 12:00:00 AM
Abstract :
Large-signal characterizations are performed for n-GaAs and n-InP diodes operating in oscillator circuits at microwave and millimeter-wave frequencies. A CAD approach, consisting of a physical device model and an efficient numerical solution method, is used to analyze several sample diode structures with different material properties and geometries. The large-signal simulation results are reported for X -band and Q-band diodes, and are found to correlate well with results obtained from both laboratory experiment and large-scale ensemble Monte Carlo calculations
Keywords :
III-V semiconductors; Monte Carlo methods; electronic engineering computing; gallium arsenide; indium compounds; numerical analysis; semiconductor device models; solid-state microwave devices; CAD; GaAs diodes; InP diodes; Q-band; X-band; ensemble Monte Carlo calculations; large-signal simulation; microwave frequency; millimeter-wave frequencies; numerical solution; oscillator circuits; physical device model; unipolar III-V semiconductor diodes; Frequency; III-V semiconductor materials; Material properties; Microwave circuits; Microwave devices; Microwave oscillators; Millimeter wave circuits; Millimeter wave technology; Semiconductor diodes; Solid modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
