Title :
The effect of Fowler-Nordheim tunneling current stress on mobility in n-channel MOSFETs
Author :
Akizawa, Mitsuru ; Matsumoto, Satoru
Author_Institution :
Dept. of Electr. Eng., Keio Univ., Yokohama, Japan
fDate :
2/1/1988 12:00:00 AM
Abstract :
The electron effective mobility in n-channel MOSFETs has been investigated under Fowler-Nordheim (F-N) tunneling current stress at room temperature. With F-N current stress, mobilities become smaller than of the prestress mobilities over the whole region of inversion carrier density Ninv, and the Ninv -dependence of the mobility almost disappears
Keywords :
carrier mobility; insulated gate field effect transistors; inversion layers; tunnelling; Fowler-Nordheim tunneling current stress; electron effective mobility; inversion carrier density; n-channel MOSFETs; Charge carrier density; Current measurement; Electron mobility; MOS capacitors; MOSFETs; Resistors; Stress; Temperature; Threshold voltage; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
