• DocumentCode
    970235
  • Title

    Effect of masking geometry on gain of bipolar transistors

  • Author

    Abbasi, Shuja A. ; Brunnschweiler, A.

  • Author_Institution
    Aligarh Muslim University, Department of Electrical Engineering, Aligarh, India
  • Volume
    17
  • Issue
    7
  • fYear
    1981
  • Firstpage
    270
  • Lastpage
    271
  • Abstract
    The gain of a double diffused bipolar transistor is found to depend upon the masking pattern. Experimental results show a significantly large systematic difference in the gains of transistors of different size and surrounding masking oxide geometry.
  • Keywords
    bipolar transistors; masks; double-diffused bipolar transistor; gain; masking geometry;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810191
  • Filename
    4245657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970235