Properties of reactively sputtered superconducting films

A review of the applicability of reactive sputtering to the synthesis of several A15 and B1 superconductors was performed. Critical temperature, Tc, of Nb3Ge and V3Si made by this method were found to be slightly lower than the highest reported values. Tc´s of V3Ge and NbC films were higher than found in bulk samples. Nb-Si films were nonsuperconducting. The preparation of pseudo-binary alloys of the Nb-V-Ge, Nb-V-Si and the Nb-Ge-Si systems resulted in no improvements in Tc´s. Fabrication of layered structures consisting of Nb-C-N and nonsuperconducting layers was investigated.