Title :
Alternative mechanism for substrate minority carrier injection in MOS devices operating in low level avalanche
Author :
Childs, P.A. ; Eccleston, W. ; Stuart, R.A.
Author_Institution :
University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
Abstract :
The mechanism proposed by Matsunaga et al. to explain the injection of minority carriers into the substrate of a saturated n-channel MOST cannot account for the size of the observed current. An alternative mechanism is suggested based on optical generation of minorities by radiation emitted by hot carriers in the drain depletion region. Evidence for this mechanism is presented.
Keywords :
hot carriers; insulated gate field effect transistors; minority carriers; MOS devices; drain depletion region; hot carriers; low level avalanche; n-channel MOST; substrate minority carrier injection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810197
