DocumentCode
970309
Title
LPE growth of 1.3 ¿m InGaAsP CW lasers on (110) InP substrates
Author
Hawrylo, F.Z.
Author_Institution
RCA Laboratories, Princeton, USA
Volume
17
Issue
8
fYear
1981
Firstpage
282
Lastpage
283
Abstract
Room temperature CW operation and threshold current densities below 1000 A/cm2 have been achieved near 1.3 ¿m wavelength with InP/InGaAsP/InP DH lasers grown by liquid phase epitaxy on (110)-oriented InP substrates.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; III-V semiconductors; InGaAsP-InP CW lasers; LPE;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810198
Filename
4245665
Link To Document