• DocumentCode
    970345
  • Title

    Massively parallel electromagnetic simulation for photolithographic applications

  • Author

    Wong, Alfred K. ; Guerrieri, Roberto ; Neureuther, Andrew R.

  • Author_Institution
    Electron. Res. Lab., California Univ., Berkeley, CA, USA
  • Volume
    14
  • Issue
    10
  • fYear
    1995
  • fDate
    10/1/1995 12:00:00 AM
  • Firstpage
    1231
  • Lastpage
    1240
  • Abstract
    The two-dimensional massively parallel electromagnetic simulation program TEMPEST has been generalized to extend its applicability to many of the difficult problems in photolithography, metrology, and alignment. TEMPEST, which has been made available on the NCSA and other computing centers, combines together techniques for analysis of the transverse electric (TE) and the transverse magnetic (TM) polarizations, oblique incidence, highly dispersive materials, and a technique for synthesis of partially coherent optical images. The solution is based on the time-domain finite-difference method, but exploits the power of massively parallel computer architectures. Equations suitable for massively parallel implementation are given for oblique incidence, both polarizations and dispersive materials. Computer time per iteration cycle is constant irrespective of the polarization and angle of incidence. However, the total simulation time for convergence was found to be dominated by physical scattering phenomena. Convergence for the TM polarization is 1.5 times slower than the TE polarization because of edge currents, and oblique incidence is 2 times slower than normal incidence owing to artificial reflection from the domain boundaries. A typical simulation time is three to five minutes with 256 k (1 k=1024) simulation nodes on a CM-2 with 8 k processors. The effectiveness of the program for photolithographic applications is demonstrated by considering the effects of subtle changes in phase-shifting mask topography on the optical images
  • Keywords
    finite difference time-domain analysis; parallel processing; photolithography; semiconductor process modelling; CM-2; TE polarization; TEMPEST; TM polarization; alignment; convergence; dispersive materials; edge currents; iteration; massively parallel computer architecture; metrology; oblique incidence; partially coherent optical images; phase-shifting mask; photolithography; reflection; scattering; time-domain finite-difference method; two-dimensional electromagnetic simulation program; Computational modeling; Convergence; Dispersion; Lithography; Magnetic materials; Metrology; Optical materials; Optical polarization; Optical scattering; Tellurium;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.466339
  • Filename
    466339