Title :
Structure dependent axial mode stability in GaAlAs/GaAs injection lasers
Author :
Seki, Katsuyuki ; Yanai, H. ; Kamiya, Toshio
Author_Institution :
University of Tokyo, Department of Electronic Engineering, Faculty of Engineering, Tokyo, Japan
Abstract :
The influence of structure on the saturation behaviour of mode gain and the axial mode stability is investigated for different types of AlGaAs injection lasers. Both experimental and theoretical results confirm that carrier confinement along the lateral direction is effective for axial mode stabilisation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical saturation; semiconductor junction lasers; GaAlAs/GaAs injection lasers; III-V semiconductors; carrier confinement; structure dependent axial mode stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810202
