• DocumentCode
    970356
  • Title

    Structure dependent axial mode stability in GaAlAs/GaAs injection lasers

  • Author

    Seki, Katsuyuki ; Yanai, H. ; Kamiya, Toshio

  • Author_Institution
    University of Tokyo, Department of Electronic Engineering, Faculty of Engineering, Tokyo, Japan
  • Volume
    17
  • Issue
    8
  • fYear
    1981
  • Firstpage
    288
  • Lastpage
    290
  • Abstract
    The influence of structure on the saturation behaviour of mode gain and the axial mode stability is investigated for different types of AlGaAs injection lasers. Both experimental and theoretical results confirm that carrier confinement along the lateral direction is effective for axial mode stabilisation.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical saturation; semiconductor junction lasers; GaAlAs/GaAs injection lasers; III-V semiconductors; carrier confinement; structure dependent axial mode stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810202
  • Filename
    4245669
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970356