Title :
Pressure measurement by GaAs piezoelectric sensors
Author :
Fricke, K. ; Hartnagel, H.-L.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, West Germany
fDate :
5/24/1990 12:00:00 AM
Abstract :
A new pressure sensor for pressures up to 100 bar and temperatures of about 200 degrees C is presented. It uses the piezoelectric effect of 111 oriented semi-insulating GaAs. This material allows the monolithic integration of sensor and electronic circuit.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; piezoelectric transducers; pressure transducers; 0 to 100 bar; 0 to 200 C; GaAs piezoelectric sensors; monolithic integration; monolithic sensor with electronics; piezoelectric effect; pressure sensor; pressures; semiconductors; semiinsulating GaAs; temperatures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900452
