Title :
High speed GaAs digital integrated circuit with clock frequency of 4.1 GHz
Author :
Yamamoto, Ryo ; Higashisaka, A.
Author_Institution :
Nippon Electric Co. Ltd., Basic Technology Research Laboratories, Kawasaki, Japan
Abstract :
A maximum clock frequency of 4.1 GHz was obtained for a GaAs digital integrated circuit using deep recess normally-on GaAs MESFETs with 1.2 ¿m long gate and interdigitated Schottky diodes. The Ti/Pt/Au gate electrode was made by a lift-off technique with conventional photolithography. The minimum propagation delay of a NAND/AND gate was estimated to be 100 ps/gate for a fan-out of 2 from the self-oscillation frequency of the master-slave flip-flops.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; Schottky-barrier diodes; digital integrated circuits; field effect integrated circuits; gallium arsenide; 4.1 GHz clock frequency; GaAs digital integrated circuit; III-V semiconductor; MESFETs; Ti/Pt/Au gate electrode; interdigitated Schottky diodes; master-slave flip-flops; photolithography; propagation delay;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810204
