Title :
Planar InP avalanche photodiode with Zn-diffused guard ring
Author :
Ando, Hideki ; Susa, N. ; Kanbe, H.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A guard ring structure with a p+-n¿-n junction formed by Zn diffusion at 450°C gave a high gain planar InP avalanche photodiode. A maximum multiplication factor of more than 50 was obtained uniformly within the photosensitive area without edge breakdown.
Keywords :
III-V semiconductors; avalanche photodiodes; indium compounds; III-V semiconductor; Zn-diffused guard ring; multiplication factor; photosensitivity; planar InP avalanche photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810205
