Title :
Ambient Effect On Ionic Charges in Dielectric Films
Author_Institution :
Kelsey-Hayes Research and Dev. Center
fDate :
12/1/1973 12:00:00 AM
Abstract :
The effect of various annealing ambients on the ionic charges contained in the dielectric structures of silicon dioxide-silicon and silicon nitride-silicon dioxide-silicon was investigated. It has been observed that most effective ambients in making ionic species immobile are nitrogen and a mixture of nitrogen and hydrogen chloride gases. Further, silicon nitride used as passivating dielectric films over semiconductor devices has been observed to be an effective barrier for ionic impurities.
Keywords :
IGFETs; MIS devices; Silicon dioxide films; Silicon nitride films; p-i-n diodes; Annealing; Capacitance measurement; Capacitance-voltage characteristics; Circuits; Current measurement; Dielectric films; Electrodes; Nitrogen; Silicon compounds; Voltage;
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
DOI :
10.1109/TPHP.1973.1136741
