High reflectivity and low resistance 1.55 mu m Al0.65In0.35As/Ga0.63In0.37As strained quarter wave Bragg reflector stack

Reflector stacks grown for use in devices operating at 1.55 mu m on InP substrates normally use lattice matched quaternary alloys and a large number of periods to obtain a high reflectivity. In this work therefore we have investigated the use of Al_0.65In_0.35As/Ga_0.63In_0.37As ternary layers, which are approximately 1% strained with respect to the substrate. Results show that over 80% reflectivity and a low resistance can be obtained with only a 12 period structure.