• DocumentCode
    970555
  • Title

    Intermodulation nulling in GaAs MESFETs

  • Author

    Parker, Anthony E. ; Scott, J.B.

  • Author_Institution
    Dept. of Electron., Macquarie Univ., North Ryde, NSW, Australia
  • Volume
    29
  • Issue
    22
  • fYear
    1993
  • Firstpage
    1961
  • Lastpage
    1962
  • Abstract
    The output conductance of gallium arsenide MESFETs, traditionally considered detrimental to device performance, is exploited to effect the cancellation of distortion. This occurs in a common-source amplifier with correct loading and provides useful gain. A technique for characterising the device is presented to allow calculation of optimum load for minimum distortion.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electric distortion; gallium arsenide; intermodulation; semiconductor device models; solid-state microwave devices; GaAs; GaAs MESFETs; common-source amplifier; distortion cancellation; intermodulation nulling; microwave amplifier devices; optimum load; output conductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931305
  • Filename
    244610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970555