Title :
Quantum phase noise and linewidth of a semiconductor laser
Author :
Yamamoto, Yusaku ; Mukai, Toshiharu ; Saito, Sakuyoshi
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Quantum phase noise of a single longitudinal mode AlGaAs semiconductor laser is measured by converting it into intensity noise. A Michelson interferometer is used and a time delay is introduced. Results on spectral linewidth and noise spectrum are in good agreement with theoretical analyses based on a rate equation. Spectral linewidth of the semiconductor laser decreases from 100 MHz to 4 MHz in proportion to (I/Ith¿1)¿1 at the bias level of I/Ith=1.05 ¿ 1.4.
Keywords :
III-V semiconductors; aluminium compounds; electric noise measurement; gallium arsenide; light interferometers; semiconductor junction lasers; spectral line breadth; AlGaAs; Michelson interferometer; noise spectrum; semiconductor junction laser; single longitudinal mode; spectral linewidth; time delay;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810230
