• DocumentCode
    970698
  • Title

    High-power high-gain monolithically integrated preamplifier/power amplifier

  • Author

    Yeh, Pinghui S. ; Jiang, Siwei ; Dagenais, Mario

  • Author_Institution
    Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
  • Volume
    29
  • Issue
    22
  • fYear
    1993
  • Firstpage
    1981
  • Lastpage
    1983
  • Abstract
    The monolithic integration of an index-guided single lateral mode optical preamplifier with a power tapered semiconductor laser amplifier is reported. With a coupled input power of only 6 mW, 4.5 W of output power is obtained at 810 nm. The far-field pattern is dominated by a diffraction-limited single lobe. An internal small signal gain of 35 dB is demonstrated.
  • Keywords
    integrated optoelectronics; refractive index; semiconductor lasers; 35 dB; 4.5 mW; 6 mW; 810 nm; coupled input power; diffraction-limited single lobe; far-field pattern; high-gain; high-power; index-guided; internal small signal gain; monolithically integrated preamplifier/power amplifier; output power; power tapered semiconductor laser amplifier; single lateral mode optical preamplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931319
  • Filename
    244624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970698