Diffusion and oxide viscous flow mechanism in SDB process and silicon wafer rapid thermal bonding

Author

Tong, Q.-Y. ; Shen, Haiying

Author_Institution

Microelectron Centre, Southeast Univ., Nanjing, China

Volume

26

Issue

11

fYear

1990

fDate

5/24/1990 12:00:00 AM

Firstpage

697

Lastpage

699

Abstract

A relationship between bonding strength and bonding area has been found which suggests that the increase in bonding strength is caused by the bonding area increase in the oxidised silicon wafer direct bonding (SDB) process. The bonding area shows a saturation property with bonding time. Diffusion of various species existing in bonding interface region plays a key role in SDB process over different temperature. Viscous flow of the oxides completes bonding at T>1050 degrees C. A rapid thermal bonding (RTB) at 1200 degrees C for 2 min following 800 degrees C for 2 hr annealing realises complete bonding with little doping profile change in the system.

Keywords

elemental semiconductors; integrated circuit technology; semiconductor technology; silicon; 2 hr; 2 min; 800 to 1200 C; SDB process; Si wafer direct bonding; Si-SiO₂-Si; SiO₂ flow; annealing; bonding area; bonding strength; bonding temperature; bonding time; complete bonding; diffusion; oxide viscous flow mechanism; rapid thermal bonding; semiconductors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900455

Filename

106024