Title :
Power limiting due to impact ionisation in GaAs MESFETs
Author_Institution :
University of New South Wales, Department of Solid-State Electronics, Kensington, Australia
Abstract :
A calculation is made of the effect of low-level impact ionisation on the power available from GaAs MESFETs. For typical FET structures it is shown that close to 1 W per mm of gate width is expected, but that deep levels in the range 1¿5×1021 m¿3 can noticeably reduce that figure.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs MESFETS; deep levels; impact ionisation; power limiting; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810239
