• DocumentCode
    970748
  • Title

    Power limiting due to impact ionisation in GaAs MESFETs

  • Author

    Ladbrooke, P.H.

  • Author_Institution
    University of New South Wales, Department of Solid-State Electronics, Kensington, Australia
  • Volume
    17
  • Issue
    10
  • fYear
    1981
  • Firstpage
    338
  • Lastpage
    339
  • Abstract
    A calculation is made of the effect of low-level impact ionisation on the power available from GaAs MESFETs. For typical FET structures it is shown that close to 1 W per mm of gate width is expected, but that deep levels in the range 1¿5×1021 m¿3 can noticeably reduce that figure.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs MESFETS; deep levels; impact ionisation; power limiting; semiconductor device models;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810239
  • Filename
    4245708
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970748