Title :
Unidirectional Bistability in AlGaInAs Microring and Microdisk Semiconductor Lasers
Author :
Mezösi, G. ; Strain, M.J. ; Fürst, S. ; Wang, Z. ; Yu, S. ; Sorel, M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow
Abstract :
We report on room-temperature continuous-wave operation and single-mode lasing of microdisk and microring lasers with radii as small as 7 mum. The waveguide sidewall roughness was minimized by an optimized fabrication process using hydrogen silsesquioxane e-beam resist and Cl 2-CH 3-H 2 inductively coupled plasma etching. The devices show unidirectional bistability between the counterpropagating modes for radii larger than 30 mu m and a strong hybrid output polarization for radii smaller than 15 mum with a transverse-magnetic component of approximately 30%.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; laser stability; microdisc lasers; optical bistability; quantum well lasers; sputter etching; AlGaInAs; AlGaInAs microdisk semiconductor lasers; AlGaInAs microring lasers; e-beam resist; hydrogen silsesquioxane; inductively coupled plasma etching; room-temperature continuous-wave operation; single-mode lasing; size 7 mum; temperature 293 K to 298 K; unidirectional bistability; waveguide sidewall roughness; Microdisk lasers; microring lasers; optical bistability; semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.2008660
