DocumentCode :
970775
Title :
Electrical and optical properties of high performance MOCVD grown (AlxGa1-x)yIn1-yP visible light-emitting diodes
Author :
Morgan, D.V. ; Bunce, R.W. ; Barnes, Sean ; Bos, T.
Author_Institution :
Sch. of Electr., Electron. & Syst. Eng., Univ. of Wales Coll. of Cardiff, UK
Volume :
29
Issue :
22
fYear :
1993
Firstpage :
1991
Lastpage :
1992
Abstract :
Electrical and optical properties of high performance (AlxGa1-xyIn1-yP light emitting diodes (LEDs) are described. The current transport mechanism is dominated by surface recombination. The orange diodes exhibit a lower surface recombination current level than the corresponding yellow and green LEDs. The device performances compare favourably with the commercially available LEDs in the orange to green spectral region.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor growth; vapour phase epitaxial growth; (Al xGa 1-x) yIn 1-yP visible light-emitting diodes; 516 to 612 nm; AlGaInP; GaAs:Si; GaAs:Si substrate; MOCVD growth; current transport mechanism; electrical properties; green LEDs; optical properties; orange diodes; orange to green spectral region; saturation current; surface recombination current level; yellow LEDs;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19931326
Filename :
244631
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=970775
بازگشت