• DocumentCode
    970787
  • Title

    Selective W deposition on GaSb layers using SiH4 reduction of WF6

  • Author

    Mitani, K. ; Imamura, Yusuke

  • Author_Institution
    Fibreopt. Div., Hitachi Ltd., Tokyo, Japan
  • Volume
    29
  • Issue
    22
  • fYear
    1993
  • Firstpage
    1992
  • Lastpage
    1994
  • Abstract
    Selective W-CVD using WF6/SiH4 chemistry is applied to GaSb and InAs, which are suitable for nonalloyed ohmic contact layers in GaAs-based devices. It is demonstrated for the first time that CVD-W films can be deposited selectively on GaSb layers. However, no W deposition is observed on InAs layers, nor on GaAs. The results of CVD-W film characterisations with SIMS (secondary ion mass spectroscopy) and XD (X-ray diffraction) are also reported.
  • Keywords
    X-ray diffraction examination of materials; chemical vapour deposition; metallisation; ohmic contacts; reduction (chemical); secondary ion mass spectra; tungsten; GaSb; GaSb layers; SIMS; SiH 4; SiH 4 reduction; W-GaSb; WF 6; WF 6/SiH 4 chemistry; X-ray diffraction; film characterisations; nonalloyed ohmic contact layers; selective CVD metallisation; selective W-CVD;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931327
  • Filename
    244632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970787