Title :
Selective W deposition on GaSb layers using SiH4 reduction of WF6
Author :
Mitani, K. ; Imamura, Yusuke
Author_Institution :
Fibreopt. Div., Hitachi Ltd., Tokyo, Japan
Abstract :
Selective W-CVD using WF6/SiH4 chemistry is applied to GaSb and InAs, which are suitable for nonalloyed ohmic contact layers in GaAs-based devices. It is demonstrated for the first time that CVD-W films can be deposited selectively on GaSb layers. However, no W deposition is observed on InAs layers, nor on GaAs. The results of CVD-W film characterisations with SIMS (secondary ion mass spectroscopy) and XD (X-ray diffraction) are also reported.
Keywords :
X-ray diffraction examination of materials; chemical vapour deposition; metallisation; ohmic contacts; reduction (chemical); secondary ion mass spectra; tungsten; GaSb; GaSb layers; SIMS; SiH 4; SiH 4 reduction; W-GaSb; WF 6; WF 6/SiH 4 chemistry; X-ray diffraction; film characterisations; nonalloyed ohmic contact layers; selective CVD metallisation; selective W-CVD;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931327
