Title :
Structure of the U-band in neutron irradiated MOVPE grown N-GaAs epilayers
Author :
Webb, J.B. ; Yousefi, G.H. ; Khanna, S.M.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
DLTS measurements of neutron irradiated MOVPE-GaAs as a function of applied field and various neutron fluences have revealed considerable structure to the previously observed broad U-band. Curve fitting procedures have been used to separate the U-band into four distinct trapping levels with characteristics consistent with those of point defects.
Keywords :
III-V semiconductors; deep level transient spectroscopy; defect electron energy states; gallium arsenide; neutron effects; point defects; semiconductor epitaxial layers; DLTS; GaAs; MOVPE; N-GaAs epilayers; U-band structure; curve fitting; neutron fluence; neutron irradiation; point defects; trapping levels;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931328
