DocumentCode
970796
Title
Structure of the U-band in neutron irradiated MOVPE grown N-GaAs epilayers
Author
Webb, J.B. ; Yousefi, G.H. ; Khanna, S.M.
Author_Institution
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Volume
29
Issue
22
fYear
1993
Firstpage
1994
Lastpage
1996
Abstract
DLTS measurements of neutron irradiated MOVPE-GaAs as a function of applied field and various neutron fluences have revealed considerable structure to the previously observed broad U-band. Curve fitting procedures have been used to separate the U-band into four distinct trapping levels with characteristics consistent with those of point defects.
Keywords
III-V semiconductors; deep level transient spectroscopy; defect electron energy states; gallium arsenide; neutron effects; point defects; semiconductor epitaxial layers; DLTS; GaAs; MOVPE; N-GaAs epilayers; U-band structure; curve fitting; neutron fluence; neutron irradiation; point defects; trapping levels;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931328
Filename
244633
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