Title :
Ultrahigh-speed AlGaAs/GaAs ballistic collection transistors using carbon as p-type dopant
Author :
Yamahata, S. ; Matsuoka, Yasutaka ; Ishibashi, Takayuki
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
Ultrahigh-speed performance is demonstrated in AlGaAs/GaAs ballistic collection transistors with a launcher (L-BCTs) grown by MOCVD using carbon (C)-doping of both a uniform base layer and a p+-layer for a potential cliff in the collector layer. A selfalignment fabrication technology characterised by a base-metal overlaid structure results in superior high-frequency performances of 100 and 144GHz for fT, and fmax, respectively.
Keywords :
III-V semiconductors; aluminium compounds; carbon; gallium arsenide; hot electron transistors; semiconductor doping; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 100 GHz; 144 GHz; AlGaAs-GaAs:C; MOCVD; base-metal overlaid structure; cutoff frequency; high current gain; high-frequency performance; launcher; maximum frequency of oscillation; p-type dopant; p +-layer doping; potential cliff; selfalignment fabrication technology; ultrahigh-speed ballistic collection transistors; uniform base layer doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931329
