CW operation of 1.5 ~ 1.6 Â¿m wavelength GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector

Author

Kobayashi, Kaoru ; Utaka, K. ; Abe, Y. ; Suematsu, Yasuharu

Author_Institution

Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan

Volume

17

Issue

11

fYear

1981

Firstpage

366

Lastpage

368

Abstract

A 1.5 ~ 1.6 Â¿m GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector (BH-DBR-ITG laser) was realised, for the first time, and CW operation was achieved up to 255 K. Single-wavelength operation was obtained at temperatures between 228 K and 245 K with the temperature dependence of lasing wavelength of 10 Ã…/deg. At 233 K, the threshold current, the output power and the differential quantum efficiency were 110 mA, 2.2 mW and 4.8%/facet, respectively.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical communication equipment; semiconductor junction lasers; CW operation; GaInAsP/InP; LPE; buried-heterostructure; differential quantum efficiency; integrated optics; integrated twin-guide laser; output power; single wavelength operation; temperature dependence of lasing wavelength; temperature range up to 255K; threshold current; wavelength range 1.5 to 1.6 micron;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19810257

Filename

4245727