Title :
CW operation of 1.5 ~ 1.6 ¿m wavelength GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector
Author :
Kobayashi, Kaoru ; Utaka, K. ; Abe, Y. ; Suematsu, Yasuharu
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
A 1.5 ~ 1.6 ¿m GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector (BH-DBR-ITG laser) was realised, for the first time, and CW operation was achieved up to 255 K. Single-wavelength operation was obtained at temperatures between 228 K and 245 K with the temperature dependence of lasing wavelength of 10 Å/deg. At 233 K, the threshold current, the output power and the differential quantum efficiency were 110 mA, 2.2 mW and 4.8%/facet, respectively.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical communication equipment; semiconductor junction lasers; CW operation; GaInAsP/InP; LPE; buried-heterostructure; differential quantum efficiency; integrated optics; integrated twin-guide laser; output power; single wavelength operation; temperature dependence of lasing wavelength; temperature range up to 255K; threshold current; wavelength range 1.5 to 1.6 micron;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810257
